Supply forms
Available configurations
- N-type
- Semi-insulating
- Prime or research grade
- Epi-ready surface
Request a Quote Wafers & Substrates
4H-SiC Wafer
4H-SiC4H silicon carbide wafers for power electronics, RF devices, wide-bandgap research and epitaxial development.
RFQ specification
Information to provide
- Diameter and polytype
- Orientation and off-axis angle
- Thickness
- Doping or resistivity
- Surface finish
- Quantity
Applications
Typical use areas
- Power electronics
- RF devices
- Wide-bandgap research
- High-temperature electronics
- SiC epitaxy
Technical definition
Parameters used to define this product.
These are specification fields, not fixed stock values. The offered values are confirmed against your RFQ.
Polytype4H-SiC
Electrical optionsN-type or semi-insulating
Surface optionsPrime, research or epi-ready configuration
Critical controlsDiameter, off-axis orientation, thickness, doping and surface finish
Order definition
What is confirmed with your quotation.
Material specification
Purity, composition, grade, dimensions, tolerances and requested form.
Production configuration
Bonding, backing, surface finish, packaging or other product-specific options.
Documentation
Analysis documentation and any additional agreed dimensional or assembly records.
Commercial supply
Quantity, lead time, DAP or EXW delivery and the applicable quotation validity.
Values and forms shown are representative. Adesis confirms the commercially offered specification in the quotation and order documents.
Technical inquiry
Specify your 4h-sic wafer requirement.
Send the material, purity, dimensions, quantity and application. We will review the complete specification before quoting.