III–V Wafers
Compound semiconductor substrates for photonics, RF, infrared and electronic devices.
- GaAs, GaN, GaSb, InP and InAs
- Dopant, carrier concentration or resistivity range
- Orientation, offcut, flat/notch and epi-ready finish
Request a Quote Semiconductor materials
Wafers & Substrates
Compound semiconductor, silicon, silicon carbide and sapphire substrates configured for research and device development.
Material range
Built around the specification.
Wafer specifications contain many interdependent parameters. Please include material, diameter, orientation, thickness, doping, surface finish and quantity.
Silicon & Silicon Carbide
Research and device substrates in established semiconductor material platforms.
- Silicon: P-type, N-type, intrinsic or SOI
- SiC polytype, conductivity and off-axis orientation
- Prime, test or research grade; SSP or DSP
Surface & Geometry Control
Mechanical and surface parameters are defined together for process compatibility.
- Thickness and total-thickness variation (TTV)
- Bow, warp and edge exclusion where critical
- Front/back surface, roughness and packaging
Sapphire & Specialty Substrates
Insulating, piezoelectric and optical substrates for epitaxy, coatings and advanced research.
- Sapphire, quartz, MgO and SrTiO₃
- LiNbO₃, LNOI/TFLN and LiTaO₃
- Cut, termination, film stack and custom thickness
Representative products
Materials we regularly evaluate.
Availability, manufacturability and final specification are confirmed individually for each inquiry.
MaterialFormula / TypeTypical supplyOptions
Gallium ArsenideGaAsSingle-crystal waferDoped · undoped · semi-insulating
Gallium NitrideGaNWafer or templateOrientation and thickness options
Gallium AntimonideGaSbSingle-crystal waferDoped or undoped
Indium PhosphideInPSingle-crystal waferEpi-ready surface
Indium ArsenideInAsSingle-crystal waferOrientation and doping options
SiliconSiSingle-crystal waferP-type · N-type · undoped
Silicon-on-InsulatorSOIEngineered silicon waferDevice and BOX layers by specification
Silicon CarbideSiCSingle-crystal waferPolytype · doping · orientation
SapphireAl₂O₃Single-crystal substrateMultiple orientations
GermaniumGeSingle-crystal waferDoping and polish options
Lithium NiobateLiNbO₃Bulk crystal waferX-cut · Y-cut · Z-cut
Thin-Film Lithium NiobateTFLN / LNOIBonded photonics waferFilm and oxide thickness by specification
Lithium TantalateLiTaO₃Piezoelectric substrateMultiple cuts and finishes
Magnesium OxideMgOSingle-crystal substrateOrientation and polish options
Strontium TitanateSrTiO₃Functional oxide substrateOrientation and termination review
QuartzSiO₂Optical substrateCut, diameter and polish options
Custom SubstrateSpecial materialResearch substrateSpecification review
RFQ definition guide
Platform-specific wafer parameters.
This comparison shows the fields normally used to define an inquiry. It is not a fixed stock specification; offered values and tolerances are confirmed in the quotation.
PlatformElectrical / stackCrystal definitionSurfaceCritical RFQ fields
GaAsUndoped, doped or semi-insulatingOrientation and offcut by specificationSSP or DSP; epi-ready optionsDiameter, dopant/resistivity, orientation, thickness, EPD where required
GaSbUndoped, n-type or p-typeOrientation, offcut and flat/notchPolished and epi-ready optionsDopant, carrier concentration, diameter, thickness and surface requirement
InPUndoped, doped or semi-insulatingOrientation and offcut by specificationSSP or DSP; epi-ready optionsConductivity, dopant/resistivity, orientation, thickness and quantity
4H-SiCN-type or semi-insulatingOn-axis or off-axis; Si-face or C-facePrime/test grade; polished optionsPolytype, conductivity, miscut, face, defect/grade requirement and thickness
Si / SOIP-type, N-type, intrinsic or engineered stack(100), (111) and other orientationsSSP, DSP or epi-readyResistivity, diameter, TTV; device layer and BOX for SOI
SapphireInsulating single crystalC-, A-, R- or M-plane; miscut if requiredSSP or DSP; epi-ready optionsCut, diameter, thickness, flatness, surface and backside finish
LNOI / TFLNBonded thin-film photonics stackX-, Y- or Z-cutOptical-quality device surfaceFilm, oxide and handle thickness; cut, diameter and electrode/process needs
Application areas
Where these materials perform.
01III–V devices02Infrared detectors03Power electronics04RF & microwave05Photonics06Epitaxy research
Frequently asked questions
Before you request a quote.
Every order is reviewed against the complete technical specification.
Which wafer specifications are needed for a quote?
Please provide material, diameter, crystal orientation and offcut, thickness, TTV where critical, doping or resistivity, surface finish, grade, edge or notch requirement, quantity and any epi-ready or packaging requirement.
Can Adesis supply doped and semi-insulating wafers?
Yes. Doped, undoped and semi-insulating options are evaluated for materials such as GaAs, InP, GaN, silicon and SiC, subject to the complete specification.
Are single-side and double-side polished substrates available?
Both finishes may be available. Surface roughness, epi-ready preparation and front or back side requirements should be stated in the inquiry.
Does the portfolio include photonics substrates?
Yes. The range includes bulk lithium niobate, thin-film lithium niobate or LNOI, lithium tantalate, III–V wafers, sapphire and other optical substrates.
Can bow, warp, TTV and surface roughness be specified?
Yes. Mechanical geometry and surface parameters can be included in the inquiry. Availability and test limits are confirmed for the selected material, diameter and grade.
Technical inquiry
Specify your wafers & substrates requirement.
Send the material, purity, dimensions, quantity and application. We will review the complete specification before quoting.