Supply forms
Available configurations
- Doped or undoped
- Semi-insulating options
- Single-side or double-side polished
- Epi-ready
Request a Quote Wafers & Substrates
Indium Phosphide Wafer
InPIndium phosphide substrates for photonics, optoelectronics, high-frequency devices and epitaxial research.
RFQ specification
Information to provide
- Diameter
- Orientation
- Thickness
- Dopant and carrier concentration
- Surface finish
- Quantity
Applications
Typical use areas
- Photonic integrated circuits
- Lasers and detectors
- High-speed electronics
- Telecommunications
- III–V epitaxy
Technical definition
Parameters used to define this product.
These are specification fields, not fixed stock values. The offered values are confirmed against your RFQ.
CrystalSingle-crystal InP
Electrical optionsUndoped, doped or semi-insulating, subject to specification
Surface optionsSSP or DSP; epi-ready finish where required
Critical controlsDiameter, orientation, dopant, carrier/resistivity and thickness
Order definition
What is confirmed with your quotation.
Material specification
Purity, composition, grade, dimensions, tolerances and requested form.
Production configuration
Bonding, backing, surface finish, packaging or other product-specific options.
Documentation
Analysis documentation and any additional agreed dimensional or assembly records.
Commercial supply
Quantity, lead time, DAP or EXW delivery and the applicable quotation validity.
Values and forms shown are representative. Adesis confirms the commercially offered specification in the quotation and order documents.
Technical inquiry
Specify your indium phosphide wafer requirement.
Send the material, purity, dimensions, quantity and application. We will review the complete specification before quoting.